GaN is a semiconductor material of third-generation with a wide forbidden-band width and better characteristics than the GaAs or Si materials of first-generation.
GaN devices, due to the large band gaps and high thermal conductivity of GaN, can operate above 200 degC temperatures, allowing them to carry higher energy densities and greater reliability. A larger forbidden band and dielectric break-down electric field can reduce the on resistance of the device. This is good for improving the overall efficiency of the product.

GaN semiconductors can therefore be designed to have a higher bandwidth, a higher amplifier gain and efficiencies, as well as smaller dimensions, all in keeping with the "tonality" that is characteristic of the semiconductor market.

The base station power amplifier also uses GaN. Gallium nitride, gallium arsenide and indium-phosphide are common semiconductor materials used in radio frequency applications.

GaN devices have better frequency characteristics than other high-frequency technologies such as indium phosphide and gallium arsenide. GaN devices must have a higher instantaneous bandwith. This can be achieved by using carrier aggregation, preparing higher frequency carriers and other techniques.

Gallium nitride can achieve higher power density than silicon or any other device. GaN has a higher energy density. GaN's small size is an advantage when it comes to a power level. Smaller devices can reduce device capacitance, allowing for the design of systems with higher bandwidth. Power Amplifiers (PA) are a critical component of the RF Circuit.

In terms of current applications, the power amplifier is mainly comprised of a gallium-arsenide poweramplifier and a complementary metallic oxide semiconductor poweramplifier (CMOS PA), where GaAs is the mainstay. However, with the advent 5G, GaAs will no longer be able to achieve high integration levels at such high frequencies.

GaN will be the next hot topic. GaN, as a wide-bandgap semiconductor, can withstand greater operating voltages. This results in higher power density. It also means a higher operating temperature.

Qualcomm President Cristiano Amon said at the Qualcomm 5G/4G Summit that the first 5G smartphones will debut during the first half and end of 2019 (Christmas and New Year). According to reports 5G technology should be up to 100 times more efficient than 4G networks. This will allow users to reach Gigabits per second and reduce latency.

As well as the increase in RF devices needed for base station RF transmitter units, both the density and number of bases will also be increased. As a result, the number of RF devices required in the 5G period will increase by dozens or even hundreds of times compared to 3G and the 4G periods. Therefore, cost control and silicon-based GaN have a major cost advantage. It is possible to achieve the best cost-effective advantage with silicon-based GaN.

In the past, semiconductor technology has faced the commercialization challenge. GaN, which is also in this stage at the moment, will cost more to civilians because of the increased demand for silicon-based devices, the mass production and process innovations, etc.

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