The electrical conductivity of titanium silicon carbide (Ti3SiC2) is high. Purity: 99%Particle Size: 325 Mesh About Titanium Silicon Carbide T3SiC2 Ti3SiC2 Puffer: Titanium carbide, with its chemical formula Ti3SiC2, is a metal- and ceramic-co…
These nanoparticles of silicon carbide are high in purity, have small particles sizes and an extremely specific surface area. It is very thermally conductive and resistant to oxidation even at extreme temperatures. Purity: 99%Particle size: 60 nm, 50…
The main difference between silicon carbide and boron carbide is that in silicon carbide one silicon atom bonds to one carbon atom, whereas in boron carbide four boron atoms bond to one carbon atom.…
In terms of international pricing benchmarks, according to the CP data released by Saudi Aramco, the propane contract price (CP) in March was $895 / ton, up $120 / ton from the previous month, up 15.48% from the previous month and up 43.20% from the…
The European Union is seeking to boost energy cooperation with African countries to help wean them off dependence on Russian gas imports.Bloomberg said, recently, according to a draft EU file, African countries, especially in western Africa Nigeria,…
Newtechnology development of high-reliability self aligning roller bearing Thenew technology of machine tool spindle self aligning roller bearing developedby Japan Seiko (hereinafter referred to as NSK) can reduce the workload duringassembly and runn…
What is gallium-nitride? GAN, which is the third-generation of semiconductor materials after SIC and Diamond, and other materials such as first generation GE, SI conductive materials and second-generation GaaS, INP INP composite semiconductor substan…