Hexagonalboron nitride, also known as white graphite, has a layered structure that is similar to graphite. It has excellent lubricity, thermal conductivity, chemical resistance and electrical insulating thermal conductivity. It is chemically inert to all forms of molten metal chemistry. The shaped article is simple to machine and has high resistance to moisture. As semiconductor chips are constantly developed, computing speed increases. The problem of chip heating is becoming a limitation to the development of chip technology. For high-performance electronic chip development, thermal management is crucial. After three years of work, Wei Dayun (a researcher at Fudan University's Department of Polymer Science and Polymer Molecular Engineering) made remarkable progress in the field of interface modification of FET-type dielectric substrates. This work will provide a new technology to modify dielectric substrates to address the problem of chip heat loss.

Wei Dacheng's team devised a conformal hexagonalboron Nitride (h-BN), modification technology to address the problem of chip heat. This is also known as quasi-balanced PeCVD. Wei Dacheng says that the heat dissipation of a chip is greatly limited by different interfaces. In particular, Wei Dacheng says that the interface between semiconductor and dielectric substrate close to the conductive channel plays a significant role.

Hexagonalboron nitride, which improves the interface of semiconductors and dielectric substrats, is an ideal material for dielectric substrate modification. Numerous studies show that hexagonal-boron nitride modification can reduce surface roughness and impact on carrier transport, and improve device carrier mobility. The potential use of hexagonalboron nitride for interface heat dissipation has been overlooked.

"The heating problem of a device is a key factor in carrier mobility. The lower the mobility, the more heat is generated at the same current. How to release heat determines how heat dissipation works. Wei Dacheng explained that the heat dissipation is related to how the heat is released. Conformal hexagonalboron nitride bonds to the surface of the material with no gaps and no impurities. This makes it more favorable for good results.

"Conformal hexagonalboron is nitride that is grown on the surface of the material is a new technology by our team. This allows for a significantly increased mobility of the tungsten-selenide field effect transistor device. The interface thermal resistance is also reduced. Furthermore, the maximum power density of device operation is up to 2 to 4 times higher than the current CPU.

This technology offers a unique solution to chip heat dissipation and high universality. It can be applied to transistors based on tungstenselende materials. The technology can also be extended for other materials and additional device applications. The PECVD technology, which was used in this research, is a common manufacturing process used in the chip manufacturing sector. This makes the conformal hexagonal boron Nitride have great potential for large scale production and application.

Future research will include the development of field-effect transistor electric materials. These materials include conjugated organic molecules (Macromolecules), low-dimensional nanomaterials, and research on the design principles of field transistor devices.

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